mixers - sub-harmonic - chip 3 3 - 28 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc266 v03.0907 general description features functional diagram input ip3: up to +17 dbm sub-harmonically pumped (x2) lo small size: 1.34 x 1.49 x 0.01 mm electrical speci cations, t a = +25 c, lo drive = +12 dbm typical applications the hmc266 is ideal for: ? 23, 26, & 38 ghz point-to-point radios ? lmds ? satcom the hmc266 chip is a broadband gaas mmic sub-harmonically pumped (x2) balanced passive mixer which can be used as an upconverter or downconverter in a small overall chip area of 1.9 mm 2 . the 2lo to rf isolation is excellent eliminating the need for additional ltering. all data is with the chip in a 50 ohm test xture connected via 0.076 mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils). these devices are much smaller and more reliable than hybrid diode mixer designs. gaas mmic sub-harmonically pumped mixer, 20 - 40 ghz parameter if = 1 ghz units min. typ. max. frequency range, rf 20 - 40 ghz frequency range, lo 10 - 20 ghz frequency range, if 1 - 3 ghz conversion loss 12 16 db noise figure (ssb) 12 16 db 2lo to rf isolation 42 52 db lo to rf isolation 20 24 db 2lo to if isolation 50 60 db rf to if isolation 16 22 db lo to if isolation 48 55 db ip3 (input) 10 13 dbm 1 db compression (input) 0 +4 dbm
mixers - sub-harmonic - chip 3 3 - 29 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature @ lo = +12 dbm isolation @ lo = +12 dbm conversion gain vs. lo drive return loss @ lo = +12 dbm if bandwidth @ lo = +12 dbm upconverter performance conversion gain @ lo = +12 dbm -20 -15 -10 -5 0 15 20 25 30 35 40 -55c +25c +85c conversion gain (db) rf frequency (ghz) -80 -70 -60 -50 -40 -30 -20 -10 0 15 20 25 30 35 40 isolation (db) rf frequency (ghz) rf/if lo/rf lo/if 2lo/rf 2lo/if -20 -15 -10 -5 0 01234 conversion gain if return loss conversion gain (db) rf frequency (ghz) -20 -15 -10 -5 0 15 20 25 30 35 40 conversion gain (db) rf frequency (ghz) -20 -15 -10 -5 0 15 20 25 30 35 40 conversion gain (db) rf frequency (ghz) +16dbm +10dbm +14dbm +12dbm +8dbm -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 40 lo/rl rf/rl return loss (db) frequency (ghz) hmc266 v03.0907 gaas mmic sub-harmonically pumped mixer, 20 - 40 ghz
mixers - sub-harmonic - chip 3 3 - 30 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mxn spurious outputs as a down converter input ip3 vs. lo drive input ip3 vs. temperature @ lo = +12 dbm input ip2 vs. lo drive input ip2 vs. temperature @ lo = +12 dbm p1db vs. temperature @ lo = +12 dbm nlo mrf 5 4 3 2 1 0 -3 -2 67 -1 50 29 70 012319 1x636 2637966 369 rf = 27 ghz @ -10 dbm lo = 13 ghz @ +12 dbm drive level all values in dbc below if power level 80 85 90 95 100 20 25 30 35 40 -55c +25c +85c ip2 (dbm) rf frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 20 25 30 35 40 -55c +25c +85c input p1db (dbm) rf frequency (ghz) 80 85 90 95 100 20 25 30 35 40 +12 dbm +14 dbm +16 dbm ip2 (dbm) rf frequency (ghz) 0 5 10 15 20 20 25 30 35 40 -55c +25c +85c ip3 (dbm) rf frequency (ghz) 0 5 10 15 20 20 25 30 35 40 +12 dbm +14 dbm +16 dbm ip3 (dbm) rf frequency (ghz) hmc266 v03.0907 gaas mmic sub-harmonically pumped mixer, 20 - 40 ghz
mixers - sub-harmonic - chip 3 3 - 31 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc266 v03.0907 gaas mmic sub-harmonically pumped mixer, 20 - 40 ghz outline drawing absolute maximum ratings rf / if input +13 dbm lo drive +23 dbm storage temperature -65 to +150 c operating temperature -55 to +85 c notes: 1. all dimensions are in inches [mm]. 2. typical bond pad is .004 square. 3. bond pad spacing center to center is .006. 4. backside metallization: gold. 5. bond pad metallization: gold. 6. backside metal is ground. 7. connection not required for unlabeled bond pads. die packaging information [1] standard alternate wp-3 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. electrostatic sensitive device observe handling precautions
mixers - sub-harmonic - chip 3 3 - 32 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc266 v03.0907 gaas mmic sub-harmonically pumped mixer, 20 - 40 ghz pad number function description interface schematic 1rf this pad is ac coupled and matched to 50 ohms. 2if this pad is dc coupled and matched to 50 ohms. 3lo this pad is ac coupled and matched to 50 ohms. die bottom gnd . pad descriptions
mixers - sub-harmonic - chip 3 3 - 33 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possib le, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc266 v03.0907 gaas mmic sub-harmonically pumped mixer, 20 - 40 ghz
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